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SUD50N03-12P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C unless noted)
80
60
T C = - 55 °C
25 °C
0.05
0.04
40
125 °C
0.03
0.02
V GS = 4.5 V
V GS = 10 V
20
0.01
0
0.00
0
10
20
30
40
50
0
20
40
60
80
2500
I D - Drain Current (A)
Transconductance
10
I D - Drain Current (A)
On-Resistance vs. Drain Current
2000
1500
1000
C iss
8
6
4
V DS = 15 V
I D = 50 A
500
0
C rss
C oss
2
0
0
5
10
15
20
25
30
0
6
12
18
24
30
1.8
V DS - Drain-to-Source Voltage (V)
Capacitance
V GS = 10 V
100
Q g - Total Gate Charge (nC)
Gate Charge
1.6
1.4
I D = 15 A
T J = 150 °C
T J = 25 °C
1.2
1.0
0.8
0.6
10
1
- 50
- 25
0
25
50
75
100
125
150
175
0
0.3
0.6
0.9
1.2
1.5
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 72267
S12-0335-Rev. C, 13-Feb-12
V SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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